2SB130
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2SB130

SKU: 2SB130
2SB130 Transistor Germanium PNP CASE: SOT9 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case SOT9
Manufacturer Matsushita Electronics
Vbr CBO 32
Vbr CEO 16
Min hFE 20-
Ic Max. (A) 1.5
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Derate Above 25°C 133m
Oper. Temp (°C) Max. 75
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 16 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 394837
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