| 2SB1317 Datasheet |
| Type | Transistor Silicon PNP | |
| Case | TO3P | |
| Manufacturer | Matsushita Electronics | |
| Polarity | PNP | |
| Maximum Collector Power Dissipation (Pc) | 150 W | |
| Maximum Collector-Base Voltage |Vcb| | 180 V | |
| Maximum Collector-Emitter Voltage |Vce| | 180 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 15 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 120 | |
| SKU | 343468 | |