2SB1320

SKU: 2SB1320

2SB1320 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SB1320 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	400m
C(ob) (F)	3.5p
Derate (Amb) (W/°C)	3.2m
hfe	160
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	80M-
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	9 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	165 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	767790

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