2SB1321

SKU: 2SB1321

2SB1321 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SB1321 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	600m
C(ob) (F)	15p
Derate (Amb) (W/°C)	4.8m
hfe	85
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	40M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	10m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.6 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	9 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	165 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	343472

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