2SB1321A

SKU: 2SB1321A

2SB1321A Transistor Silicon PNP CASE: MT1 MAKE: Generic

Datasheet

2SB1321A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	MT1
Manufacturer	Panasonic
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	600m
C(ob) (F)	15p
Derate (Amb) (W/°C)	4.8m
hfe	120
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	40M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	10m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.6 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	6 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	85
SKU	343473

Back