2SB1322

2SB1322

SKU: 2SB1322
2SB1322 Transistor Silicon PNP CASE: SOT33 MAKE: PAN
Datasheet
2SB1322 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT33
Manufacturer PAN
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Max. hFE 340
Min hFE 85
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 165 °C
Forward Current Transfer Ratio (hFE), MIN 160
SKU 343474
Back