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2SB1365
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2SB1365

SKU: 2SB1365
2SB1365 Transistor Silicon PNP CASE: SOT89 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer Hitachi
Vbr CBO 20
Vbr CEO 16
Max. PD (W) 1.0
Max. hFE 320
Min hFE 100
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 180
SKU 542867
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