The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1376
View detailed images (5)

2SB1376

SKU: 2SB1376
2SB1376 Transistor Silicon PNP CASE: SOT32 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case SOT32
Manufacturer Matsushita Electronics
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Max. hFE 460
Min hFE 120
Ic Max. (A) 100m
@Ic (test) (A) 2.0m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 145 °C
Forward Current Transfer Ratio (hFE), MIN 160
SKU 116541
Back