| 2SB1377 Datasheet |
| Type | Transistor Silicon PNP | |
| Case | SOT32 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 50 | |
| Vbr CEO | 50 | |
| Max. PD (W) | 1.0 | |
| Derate (Amb) (W/°C) | 8.0m | |
| Max. hFE | 340 | |
| Min hFE | 85 | |
| Ic Max. (A) | 500m | |
| @Ic (test) (A) | 150m | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 45M | |
| Oper. Temp (°C) Max. | 150 | |
| @VCE (V) | 10 | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.6 W | |
| Maximum Collector-Base Voltage |Vcb| | 30 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 0.5 A | |
| Max. Operating Junction Temperature (Tj) | 165 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 160 | |
| SKU | 116542 | |