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2SB138
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2SB138

SKU: 2SB138
2SB138 Transistor Germanium PNP CASE: TO3 MAKE: Mitsubishi
Product specifications
Equivalent 2SB138B
Type Transistor Germanium PNP
Case TO3
Manufacturer Mitsubishi
Vbr CBO 60
Vbr CEO 35
Max. PD (W) 30
Max. hFE 250
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
Derate Above 25°C 500m
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 551980
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