2SB1386

SKU: 2SB1386

2SB1386 Transistor Silicon PNP CASE: SP0 MAKE: Rohm Semiconductor

Datasheet

2SB1386 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SP0
Manufacturer	Rohm Semiconductor
Vbr CEO	20
Max. PD (W)	2.0
Max. hFE	390
Min hFE	82
Ic Max. (A)	10
@Ic (test) (A)	500m
Polarity	PNP
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	343487

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