2SB1409S
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2SB1409S

SKU: 2SB1409S
2SB1409S Transistor Silicon PNP CASE: Standard MAKE: Generic
Datasheet
2SB1409S Datasheet
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Hitachi Semiconductor
Polarity PNP
Maximum Collector Power Dissipation (Pc) 18 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 343511
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