2SB1411
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2SB1411

SKU: 2SB1411
2SB1411 Transistor Silicon PNP CASE: SOT186A MAKE: Toshiba
Datasheet
2SB1411 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT186A
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 7000
SKU 343512
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