The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1412
View detailed images (8)

2SB1412

SKU: 2SB1412
2SB1412 Transistor Silicon PNP CASE: TO252 MAKE: Rohm Semiconductor
Datasheet
2SB1412 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Rohm Semiconductor
Vbr CEO 20
Max. PD (W) 10
Max. hFE 390
Min hFE 82
Ic Max. (A) 10
@Ic (test) (A) 500m
Polarity PNP
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 82
SKU 343513
Back