| Type | Transistor Silicon PNP | |
| Case | SOT430 | |
| Manufacturer | Matsushita Electronics | |
| Polarity | PNP | |
| Maximum Collector Power Dissipation (Pc) | 120 W | |
| Maximum Collector-Base Voltage |Vcb| | 160 V | |
| Maximum Collector-Emitter Voltage |Vce| | 160 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 12 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 90 | |
| SKU | 550298 | |