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2SB1436
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2SB1436

SKU: 2SB1436
2SB1436 Transistor Silicon PNP CASE: TO126 MAKE: Rohm Semiconductor
Datasheet
2SB1436 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Rohm Semiconductor
Vbr CEO 20
Max. PD (W) 10
Max. hFE 390
Min hFE 82
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Polarity PNP
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SKU 343526
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