The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1440
View detailed images (12)

2SB1440

SKU: 2SB1440
2SB1440 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics
Datasheet
2SB1440 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer Matsushita Electronics
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Max. hFE 340
Min hFE 120
Ic Max. (A) 2.0
@Ic (test) (A) 200m
Polarity PNP
Trans. Freq (Hz) Min. 80M-
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 343528
Back