| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO263 |
| Manufacturer |
Sanyo Semiconductor |
| Vbr CBO |
60 |
| Vbr CEO |
50 |
| Max. PD (W) |
30 |
| Derate (Amb) (W/°C) |
240m |
| t(f) Max. (S) |
200n- |
| Max. hFE |
280 |
| Min hFE |
70 |
| Ic Max. (A) |
5.0 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
PNP |
| Tr Max. (s) |
100n- |
| Trans. Freq (Hz) Min. |
30M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
2.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
30 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
5 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
15 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
240 |
| SKU |
343531 |