The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB149N
View detailed images (13)

2SB149N

SKU: 2SB149N
2SB149N Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Equivalent 2SB149
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 40
Min hFE 60-
Ic Max. (A) 8.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 10m
Polarity PNP
R(sat) (Û) 50m
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 250k
Oper. Temp (°C) Max. 75
@VCE (V) 1.5i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 767513
Back