2SB150

SKU: 2SB150

2SB150 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Toshiba
Vbr CBO	105
Vbr CEO	40
Max. PD (W)	50m
C(ob) (F)	20p
Derate (Amb) (W/°C)	1.0m
hfe	35
Ic Max. (A)	40m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	500k
@VCE (test) (V)	1.0i
Oper. Temp (°C) Max.	75
@Ic (A)	20m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.05 W
Maximum Collector-Base Voltage \|Vcb\|	105 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	40 V
Maximum Collector Current \|Ic max\|	0.04 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	584630

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