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2SB159
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2SB159

SKU: 2SB159
2SB159 Transistor Germanium PNP CASE: SOT19 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case SOT19
Manufacturer Matsushita Electronics
Vbr CBO 7.0
Max. PD (W) 10m
Derate (Amb) (W/°C) 667u
hfe 80
Ic Max. (A) 5.0m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. .90M
@VCE (test) (V) .50i
Oper. Temp (°C) Max. 60
@Ic (A) .25m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.06 W
Maximum Collector-Base Voltage |Vcb| 7 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.005 A
Max. Operating Junction Temperature (Tj) 65 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 549758
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