2SB1617
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2SB1617

SKU: 2SB1617
2SB1617 Transistor Silicon PNP CASE: Standard MAKE: Toshiba
Datasheet
2SB1617 Datasheet
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 1.3 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 27 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 343603
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