2SB167
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2SB167

SKU: 2SB167
2SB167 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Fujitsu
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 200m
Derate (Amb) (W/°C) 3.3m
hfe 80
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
Trans. Freq (Hz) Min. 1.2M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 540060
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