The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB168
View detailed images (13)

2SB168

SKU: 2SB168
2SB168 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Fujitsu
Vbr CBO 9.0
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.5m
hfe 60
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 14u
Polarity PNP
Trans. Freq (Hz) Min. .80M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 9 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 540061
Back