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2SB170
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2SB170

SKU: 2SB170
2SB170 Semiconductor
Price: £14.39
+ VAT 20% for UK purchases
£14.39
Qty
+ VAT 20% for UK purchases
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Datasheet
2SB170 Datasheet
Product specifications
Type Transistor
Case TO1
Manufacturer Matsushita
Vbr CBO 30
Max. PD (W) 125m
Derate (Amb) (W/°C) 2.5m
hfe 30
Ic Max. (A) 10m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 300k
@VCE (test) (V) 2.0i
Oper. Temp (°C) Max. 75
@Ic (A) 500u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.125 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 313290
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