2SB177

SKU: 2SB177

2SB177 Transistor Germanium PNP CASE: TO1 MAKE: Matsushita Electronics

Datasheet

2SB177 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Matsushita Electronics
Vbr CBO	60
Max. PD (W)	125m
Derate (Amb) (W/°C)	2.5m
hfe	65
Ic Max. (A)	125m
Icbo Max. @Vcb Max. (A)	12u
Polarity	PNP
Trans. Freq (Hz) Min.	900k
Oper. Temp (°C) Max.	75
@Ic (A)	300m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.125 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.125 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	65
SKU	343628

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