2SB181

SKU: 2SB181

2SB181 Transistor Germanium PNP CASE: TO8 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Equivalent	2SB181A
Type	Transistor Germanium PNP
Case	TO8
Manufacturer	Fujitsu
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	5.5
Max. hFE	150
Min hFE	20
Ic Max. (A)	500m
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Derate Above 25°C	85m
Trans. Freq (Hz) Min.	13k
Oper. Temp (°C) Max.	100
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	13 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	540064

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