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2SB189
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2SB189

SKU: 2SB189
2SB189 Transistor Germanium PNP CASE: TO1H MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO1H
Manufacturer Toshiba
Vbr CBO 25
Max. PD (W) 250m
C(ob) (F) 35p
Derate (Amb) (W/°C) 5.0m
hfe 70
Ic Max. (A) 250m
Icbo Max. @Vcb Max. (A) 14u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 75
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.25 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 767322
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