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2SB19
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2SB19

SKU: 2SB19
2SB19 Transistor Germanium PNP CASE: R57 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case R57
Manufacturer Fujitsu
Vbr CBO 16
Max. PD (W) 5.5
Max. hFE 250
Min hFE 20
Ic Max. (A) 2.5
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Derate Above 25°C 122m
Oper. Temp (°C) Max. 75
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5.5 W
Maximum Collector-Base Voltage |Vcb| 16 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 767320
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