2SB200

SKU: 2SB200

2SB200 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba

Price:

£40.79 Inc. VAT (£33.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Toshiba
Vbr CBO	32
Vbr CEO	32
Max. PD (W)	250m
Derate (Amb) (W/°C)	5.0m
hfe	30
Ic Max. (A)	400m
Icbo Max. @Vcb Max. (A)	40u
@Temp. (test) (°C)	50
VRRM	200
Polarity	PNP
1-Cycle Surge Current (A)	50
@Temp. (test) for Vf)	25
Vf Max.	1.0
Ir @25°C	10u
I(out) (If AVG) Max.	2.0
Trans. Freq (Hz) Min.	500k
@VCE (test) (V)	1.0
@Volts (test) (V)	200
@If (test)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	150m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Collector-Emitter Voltage \|Vce\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	767315

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