2SB201

SKU: 2SB201

2SB201 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	300m
Derate (Amb) (W/°C)	4.5m
hfe	60
Ic Max. (A)	400m
Icbo Max. @Vcb Max. (A)	30u
Polarity	PNP
Trans. Freq (Hz) Min.	.50M
@VCE (test) (V)	1.0
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	584632

Back