2SB202

SKU: 2SB202

2SB202 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Toshiba
Vbr CBO	32
Vbr CEO	32
Max. PD (W)	250m
Derate (Amb) (W/°C)	5.0m
hfe	70
Ic Max. (A)	400m
Icbo Max. @Vcb Max. (A)	40u
Polarity	PNP
Trans. Freq (Hz) Min.	500k
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	75
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Collector-Emitter Voltage \|Vce\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	767313

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