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2SB211
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2SB211

SKU: 2SB211
2SB211 Transistor Germanium PNP CASE: TO3 MAKE: Shindengen
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Shindengen
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 80
Max. hFE 40-
Min hFE 20
Ic Max. (A) 20
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
R(sat) (Û) 30m
Derate Above 25°C 1.3
Trans. Freq (Hz) Min. 2.5k
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 767302
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