2SB228

SKU: 2SB228

2SB228 Transistor Germanium PNP CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Hitachi
Vbr CBO	80
Vbr CEO	35
Max. hFE	54
Min hFE	20
Ic Max. (A)	5.0
@Ic (test) (A)	4.0
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
R(sat) (Û)	160m
Derate Above 25°C	757m
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	12 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	50 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	90 °C
Forward Current Transfer Ratio (hFE), MIN	35
SKU	542434

Back