2SB231

SKU: 2SB231

2SB231 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	120
Vbr CEO	120
Max. hFE	200
Min hFE	25
Ic Max. (A)	6.0
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
Tr Max. (s)	1.2u
R(sat) (Û)	.06
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	75
@VCE (V)	1.5i
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	584633

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