2SB232

SKU: 2SB232

2SB232 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	130
Min hFE	20
Ic Max. (A)	6.0
@Ic (test) (A)	.20
Icbo Max. @Vcb Max. (A)	.22m
Polarity	PNP
Derate Above 25°C	667m
Oper. Temp (°C) Max.	100
@VCE (V)	1.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	20
SKU	549760

Back