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2SB233
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2SB233

SKU: 2SB233
2SB233 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 130
Min hFE 100
Ic Max. (A) 6.0
@Ic (test) (A) .20
Icbo Max. @Vcb Max. (A) .22m
Polarity PNP
Derate Above 25°C 667m
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 54 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 90 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 549761
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