| Type | Transistor Germanium PNP | |
| Case | TO3 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 180 | |
| Min hFE | 15 | |
| Ic Max. (A) | 1.5 | |
| @Ic (test) (A) | 6.0 | |
| Icbo Max. @Vcb Max. (A) | 220u | |
| Polarity | PNP | |
| Derate Above 25°C | 667m | |
| Oper. Temp (°C) Max. | 100 | |
| @VCE (V) | 1.0 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 40 W | |
| Maximum Collector-Base Voltage |Vcb| | 180 V | |
| Maximum Emitter-Base Voltage |Veb| | 1 V | |
| Maximum Collector Current |Ic max| | 15 A | |
| Max. Operating Junction Temperature (Tj) | 85 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 15 | |
| SKU | 549762 | |