2SB258

SKU: 2SB258

2SB258 Transistor Germanium PNP CASE: TO36 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO36
Manufacturer	Toshiba
Vbr CBO	120
Max. PD (W)	60
Max. hFE	280
Min hFE	38
Ic Max. (A)	15
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	3.5m
Polarity	PNP
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	1.5M
Oper. Temp (°C) Max.	75
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.7 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	584638

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