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2SB26
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2SB26

SKU: 2SB26
2SB26 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Equivalent 2SB26A
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 25
Vbr CEO 45
Max. PD (W) 20
Max. hFE 110
Min hFE 34
Ic Max. (A) 1.5
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 16m
Polarity PNP
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 250k
Oper. Temp (°C) Max. 75
@VCE (V) 1.5i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 584225
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