2SB261

SKU: 2SB261

2SB261 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Fujitsu
Vbr CBO	20
Vbr CEO	15
Max. PD (W)	65m
Derate (Amb) (W/°C)	1.1m
hfe	45
Ic Max. (A)	30m
Icbo Max. @Vcb Max. (A)	12u
Polarity	PNP
Trans. Freq (Hz) Min.	2.5M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	100
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.065 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	45
SKU	767282

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