2SB265

SKU: 2SB265

2SB265 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	170m
C(ob) (F)	30p
Derate (Amb) (W/°C)	3.4m
hfe	100
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	1.3M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	75
@Ic (A)	100m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.17 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	50 pF
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	584641

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