2SB268

SKU: 2SB268

2SB268 Transistor Germanium PNP CASE: TO7 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO7
Manufacturer	Mitsubishi
Vbr CBO	30
Vbr CEO	30
Max. PD (W)	250m
Derate (Amb) (W/°C)	4.1m
hfe	70
Ic Max. (A)	150m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	1.0M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	100
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	767278

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