The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB275
View detailed images (13)

2SB275

SKU: 2SB275
2SB275 Transistor Germanium PNP CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Hitachi
Vbr CBO 120
Vbr CEO 105
Max. PD (W) 12
Min hFE 40-
Ic Max. (A) 6.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Derate Above 25°C 185m
Trans. Freq (Hz) Min. 1.0k
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 105 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 542437
Back