2SB276

SKU: 2SB276

2SB276 Transistor Germanium PNP CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Hitachi
Vbr CBO	120
Vbr CEO	105
Max. PD (W)	12
Min hFE	35-
Ic Max. (A)	10
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Derate Above 25°C	185m
Trans. Freq (Hz) Min.	1.0k
Oper. Temp (°C) Max.	100
@VCE (V)	1.2
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	12 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	105 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	542438

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