The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB283
View detailed images (13)

2SB283

SKU: 2SB283
2SB283 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 48
Max. PD (W) 30
t(f) Max. (S) 25u
Max. hFE 80
Min hFE 35
Ic Max. (A) 6.0
@Ic (test) (A) 6.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 15u
Trans. Freq (Hz) Min. 250k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 48 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 549765
Back