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2SB285
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2SB285

SKU: 2SB285
2SB285 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 30
t(f) Max. (S) 25u
Max. hFE 65
Min hFE 20
Ic Max. (A) 6.0
@Ic (test) (A) 6.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 15u
Trans. Freq (Hz) Min. 250k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.12 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 549767
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