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2SB291
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2SB291

SKU: 2SB291
2SB291 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 150m
C(ob) (F) 35p
Derate (Amb) (W/°C) 3.0m
hfe 100
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 75
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 584644
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