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2SB295
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2SB295

SKU: 2SB295
2SB295 Transistor Germanium PNP CASE: TO3 MAKE: Fujitsu
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Fujitsu
Vbr CBO 100
Vbr CEO 65
Max. PD (W) 40
Max. hFE 120
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
R(sat) (Û) 200m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 4.5k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 540065
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