2SB296

SKU: 2SB296

2SB296 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	160
Vbr CEO	160
Max. PD (W)	30
Max. hFE	200
Min hFE	25
Ic Max. (A)	10
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	330u
Polarity	PNP
R(sat) (Û)	150m
Derate Above 25°C	714m
Trans. Freq (Hz) Min.	1.5M
Oper. Temp (°C) Max.	75
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.7 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	584646

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